Microelectronics and Quantum Chip Modeling
What is ARTEMIS?
We are using new physical coupling in potential electronic devices. This includes modeling and characterization of miniaturized magnetic components in radio-frequency (RF) systems, specifically nonlinear dynamic magnetic spin oscillations interacting with EM waves. We are developing a unique numerical algorithm to predict the influence of magnetic spins on the performance of compact RF devices. The Development of this multi-physics software is under the framework of AMReX, with features of massively parallel computing and block-structured adaptive mesh refinement (AMR). Such modeling tools enable a unique ability to accurately model and design next-generation RF systems and components.
Classical Modeling of Quantum Chips
In an effort to aid in the design of better quantum chip prototypes, we are developing a new numerical modeling capability to predict both the interaction between qubits and photons (known as circuit quantum electrodynamics, or cQED) and the cross-talk between qubits and in-air electromagnetic (EM) waves.
This requires implementation of new physical models to resolve the non-linear interactions between the EM field and the quantum response from the Josephson junction modeled using a hybrid classical-quantum approach. Additionally, to model the photon-qubit interaction, the Maxwell's equations will be implicitly coupled to the Schrodinger equation that quantifies the qubit response to the applied and self-consistent EM field.
With the use of adaptive mesh and adaptive algorithm approach for this complex electrodynamic material model with a complex embedded geomtry, we will be able to conduct a detailed numerical study on the loss mechanisms for a given quantum chip prototype.
Nano-Sensors on CMOS
As traditional CMOS scaling offers diminishing gains in performance, alternative approaches, such as codesign and heterogeneous integration of low-dimensional (0D, 1D and 2D) materials, present new opportunities. We are developing scalable integration of photon nano-sensors on a CMOS platform. CMOS circuit simulation is an indispensable part of any modern design. Manufacturers provide extremely detailed simulation models for the devices in their process, to be used with specific circuit simulators. These are generally based on SPICE for the lowest level simulations that are carried out. Incorporating new active devices that will be part of the same circuit along with CMOS transistors requires the same level of detail and full compatibility with the commercial simulator codes used. While transistor models have typically been extracted from parameter analyzer measurements on a large variety of device geometries and test conditions, this approach would be prohibitive for initial modeling of new nano-devices, where generating a large variety of test devices and making hundreds of measurements on each would represent a large effort and take a long time. We will instead rely on physical modeling starting from the device structure using ARTEMIS.
P. Kumar, A. Nonaka, R. Jambunathan, G. Pahwa, S. Salahuddin, and Z. Yao, FerroX: A GPU-accelerated, 3D Phase-Field Simulation Framework for Modeling Ferroelectric Devices, submitted for publication. [arxiv]
S. Sawant, Z. Yao, R. Jambunathan, and A. Nonaka, Characterization of Transmission Lines in Microelectronics Circuits using the ARTEMIS Solver, submitted for publication. [arxiv]
Z. Yao, R. Jambunathan, Y. Zeng, and A. Nonaka, A Massively Parallel Time-Domain Coupled Electrodynamics-Micromagnetics Solver, International Journal of High Performance Computing Applications, 10943420211057906, 2021. [link]